| PART |
Description |
Maker |
| TPCP8F01 |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| 2SA2056 |
TOSHIBA Transistor Silicon PNP Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC6602 |
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
|
Toshiba Semiconductor
|
| 2SB1640 |
TOSHIBA Transistor Silicon PNP Triple Diffused Type
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2907 RN2908 RN2909 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2209 RN2207 RN2208 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA970 2SA970-GR |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
|
Toshiba Semiconductor
|
| RN2310 RN2311 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
| 2SA1350 2SA1350D |
Silicon PNP Transistor
Silicon PNP Epitaxial
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SPAK
|
HITACHI[Hitachi Semiconductor]
|
